Semiconductor device manufacturing method
US8440524B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 18, 2011 |
| Grant date | May 14, 2013 |
| Priority date | — |
| Expiry date | Feb 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device including a semiconductor substrate composed of silicon carbide, an upper surface electrode which contacts an upper surface of the substrate, and a lower surface electrode which contacts a lower surface of the substrate, the method including steps of: (a) forming an upper surface structure on the upper surface side of the substrate, and (b) forming a lower surface structure on the lower surface side of the substrate. The step (a) comprises steps of: (a1) depositing an upper surface electrode material layer on the upper surface of the substrate, the upper surface electrode material layer being a raw material layer of the upper surface electrode, and (a2) annealing the upper surface electrode material layer. The step (b) comprises steps of: (b1) depositing a lower surface electrode material layer on the lower surface of the substrate, the lower surface electrode material layer being a raw material layer of the lower surface electrode, and (b2) annealing the lower surface electrode material layer with a laser to make an ohmic contact between the lower surface electrode and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.