Re-establishing surface characteristics of sensitive low-k dielectrics in microstructure device by using an in situ surface modification

US8440579B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Matthias Schaller · Dresden, DE
• Daniel Fischer · Furth, DE
• Thomas Oszinda · Dresden, DE

Key dates

• Filing date: Jul 8, 2011
• Grant date: May 14, 2013
• Expiry date: Oct 18, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02126
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Patterning-induced damage of sensitive low-k dielectric materials in semiconductors devices may be restored to a certain degree on the basis of a surface treatment that is performed prior to exposing the device to ambient atmosphere. To this end, the dangling silicon bonds of the silicon oxide-based low-k dielectric material may be saturated in a confined process environment, thereby providing superior surface conditions for the subsequent application of an appropriate repair chemistry.