Methods for forming strained channel dynamic random access memory devices
US8441055B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 7, 2012 |
| Grant date | May 14, 2013 |
| Priority date | — |
| Expiry date | Aug 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/09
Abstract
DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.