Stabilized chemical mechanical polishing composition and method of polishing a substrate

US8444728B2 · kind B2 · utility

Assignee

• Rohm and Haas Electronic Materials CMP Holdings, Inc. · US

Inventors

• Yi Guo · Shanghai, CN
• Zhendong Liu · Newark, US
• Kancharla-Arun Kumar Reddy · Wilmington, US
• Guangyun Zhang · Furlong, US

Key dates

• Filing date: Jun 12, 2012
• Grant date: May 21, 2013
• Expiry date: Jun 12, 2032

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C09K3/1463
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 20 wt % abrasive having an average particle size of 5 to 50 nm; and, 0.001 to 1 wt % of an adamantyl substance according to formula (II):wherein A is selected from N and P; wherein each R8 is independently selected from hydrogen, a saturated or unsaturated C1-15 alkyl group, C6-15 aryl group, C6-15 aralkyl group, C6-15 alkaryl group; and, wherein the anion in formula (II) can be any anion that balances the positive charge on the cation in formula (II).