Method of manufacturing semiconductor device and semiconductor device
US8445303B2 · kind B2 · utility
0Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2012 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Feb 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.