Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element
US8445319B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2011 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Aug 8, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/90
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0<x<2.5) and a second region comprising a second oxygen-deficient tantalum oxide having a composition represented by TaOy (x<y<2.5), the first region and the second region being arranged in a thickness direction of the resistance variable layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.