Single crystal silicon rod fabrication methods and a single crystal silicon rod structure
US8445332B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2007 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Apr 16, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2962
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a single crystal silicon rod may include forming an insulation layer on a substrate, forming a hole in the insulation layer, selectively growing silicon in the hole, forming a silicon layer on the hole and on the insulation layer, forming a rod pattern on the silicon layer in a direction that is non-radial with respect to the hole, and melting the silicon layer and crystallizing the silicon layer by illuminating a laser beam on the silicon layer where the rod pattern is formed to generate a nucleation site at a position corresponding to the hole. According to the method, a single crystal silicon rod having no defects may be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.