Method for integrating MIM capacitor and thin film resistor in modular two layer metal process and corresponding device
US8445353B1 · kind B1 · utility
11Cited by
6References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 29, 2009 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Apr 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for integrating a metal-insulator-metal (MIM) capacitor and a thin film resistor in an integrated circuit is provided that includes depositing a first metal layer outwardly of a semiconductor wafer substrate. A portion of the first metal layer forms a bottom plate for a MIM capacitor. A second metal layer is deposited outwardly of the first metal layer. A first portion of the second metal layer forms a top plate for the MIM capacitor and a second portion of the second metal layer forms contact pads for a thin film resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.