Smoothing method for semiconductor material and wafers produced by same
US8445386B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2010 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Nov 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A smoothing method for semiconductor material and semiconductor wafers produced by the method are disclosed. Semiconductor wafers with reduced atomic steps, as well with reduced scratches and subsurface defects can be produced. Such wafers feature an improved growth surface that can provide for the growth of an epilayer with reduced macroscopic defects and defect densities. A method of smoothing the surface of a wafer according to example embodiments of the invention includes planarizing the surface of a semiconductor wafer, and then oxidizing the wafer to achieve a specified thickness of oxide on the surface of the wafer. The oxide can then be stripped from the surface of the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.