Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing

US8445890B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Lifang Xu · Boise, US
• Zaiyuan Ren · Boise, US

Key dates

• Filing date: Mar 9, 2010
• Grant date: May 21, 2013
• Expiry date: Oct 7, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/819

Abstract

Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (“GaN”) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (“InGaN”)/GaN multi quantum well (“MQW”) active region directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN/GaN MQW, and P-type GaN materials is grown a semi-polar sidewall.