Nitride based semiconductor device and method for manufacturing the same
US8445891B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2011 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | May 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
Disclosed herein is a nitride based semiconductor device. There is provided a nitride based semiconductor device including: a base substrate; an epitaxial growth layer disposed on the base substrate and generating 2-dimensional electron gas (2DEG) therein; and an electrode structure disposed on the epitaxial growth layer and having an extension extending into the epitaxial growth layer, wherein the epitaxial growth layer includes a depressing part depressed thereinto from the surface of the epitaxial growth layer, and the depressing part includes: a first area in which the extension is disposed; and a second area that is an area other than the first area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.