Thin film transistor having a crystalline semiconductor film including indium oxide which contains a hydrogen element and method for manufacturing same
US8445903B2 · kind B2 · utility
26Cited by
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Key dates
| Filing date | Oct 19, 2009 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Oct 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/031
Abstract
A thin film transistor including a gate electrode, a gate-insulating film, an oxide semiconductor film in contact with the gate-insulating film, and source and drain electrodes which connect to the oxide semiconductor film and are separated with a channel part therebetween, wherein the oxide semiconductor film comprises a crystalline indium oxide which includes hydrogen element, and the content of the hydrogen element contained in the oxide semiconductor film is 0.1 at % to 5 at % relative to all elements which form the oxide semiconductor film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.