Semiconductor device having analog transistor with improved operating and flicker noise characteristics and method of making same
US8445968B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Apr 21, 2011 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Apr 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
A semiconductor device with improved transistor operating and flicker noise characteristics includes a substrate, an analog NMOS transistor and a compressively-strained-channel analog PMOS transistor disposed on the substrate. The device also includes a first etch stop liner (ESL) and a second ESL which respectively cover the NMOS transistor and the PMOS transistor. The relative measurement of flicker noise power of the NMOS and PMOS transistors to flicker noise power of reference unstrained-channel analog NMOS and PMOS transistors at a frequency of 500 Hz is less than 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.