Electromechanical transducer device and method of forming a electromechanical transducer device

US8445978B2 · kind B2 · utility

Assignees

• Freeescale Semiconductor, Inc. · US
• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Francois Perruchot · Issy-les-Moulineaux, FR
• Emmanuel Defay · Saint-Égrève, FR
• Patrice Rey · Voiron, FR
• Lianjun Liu · Gilbert, US
• Sergio Pacheco · Chandler, US

Key dates

• Filing date: Nov 25, 2009
• Grant date: May 21, 2013
• Expiry date: May 25, 2030

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81B2201/032
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure comprising at least one mechanical layer having a first thermal response characteristic and a first mechanical stress response characteristic, at least one layer of the actuating structure, the at least one layer having a second thermal response characteristic different to the first thermal response characteristic and a second mechanical stress response characteristic different to the first mechanical stress response characteristic, a first compensation layer having a third thermal response characteristic and a third mechanical stress characteristic, and a second compensation layer having a fourth thermal response characteristic and a fourth mechanical stress response characteristic. The first and second compensation layers are arranged to compensate a thermal effect produced by the different first and second thermal response characteristics of the mechanical structure and the at least one layer of the actuating structure such th…