Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming a perpendicular magnetic film of the same
US8445981B2 · kind B2 · utility
4Cited by
4References
48Claims
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Key dates
| Filing date | Jul 6, 2011 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Jul 10, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming perpendicular magnetic films are provided. The magnetic memory device may include a seed pattern on a substrate having a first crystal structure, a perpendicular magnetic pattern on the seed pattern having a second crystal structure, and an interlayer pattern between the seed pattern and the perpendicular magnetic pattern. The interlayer pattern may reduce a stress caused by a difference between horizontal lattice constants of the first and the second crystal structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.