Interconnect structures
US8446012B2 · kind B2 · utility
7Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 2007 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Oct 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a first dielectric layer over a substrate. At least one first conductive structure is within the first dielectric layer. The first conductive structure includes a cap portion extending above a top surface of the first dielectric layer. At least one first dielectric spacer is on at least one sidewall of the cap portion of the first conductive structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.