Logic-cell-compatible decoupling capacitor
US8446175B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 22, 2011 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Feb 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
Abstract
An integrated circuit containing CMOS logic gates and a logic-cell-compatible decoupling capacitor adjacent to the logic gates, in which the decoupling capacitor includes p+/n and n+/p capacitors, resistors between 1 and 1000 ohms connecting the capacitors to Vdd and Vss buses, and gate elements which have widths and spacings similar to the adjacent logic gates. A process of forming an integrated circuit containing CMOS logic gates and a logic-cell-compatible decoupling capacitor adjacent to the logic gates, in which the decoupling capacitor includes p+/n and n+/p capacitors, resistors between 1 and 1000 ohms connecting the capacitors to Vdd and Vss buses, and gate elements which have widths and spacings similar to the adjacent logic gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.