Patent · US Active

Logic-cell-compatible decoupling capacitor

US8446175B2 · kind B2 · utility

8Cited by
0References
20Claims
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Key dates

Filing dateFeb 22, 2011
Grant dateMay 21, 2013
Priority date
Expiry dateFeb 22, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/10

Abstract

An integrated circuit containing CMOS logic gates and a logic-cell-compatible decoupling capacitor adjacent to the logic gates, in which the decoupling capacitor includes p+/n and n+/p capacitors, resistors between 1 and 1000 ohms connecting the capacitors to Vdd and Vss buses, and gate elements which have widths and spacings similar to the adjacent logic gates. A process of forming an integrated circuit containing CMOS logic gates and a logic-cell-compatible decoupling capacitor adjacent to the logic gates, in which the decoupling capacitor includes p+/n and n+/p capacitors, resistors between 1 and 1000 ohms connecting the capacitors to Vdd and Vss buses, and gate elements which have widths and spacings similar to the adjacent logic gates.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.