Patent · US Active

Memory system and programming method thereof

US8446773B2 · kind B2 · utility

3Cited by
5References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 13, 2011
Grant dateMay 21, 2013
Priority date
Expiry dateNov 15, 2031

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C16/3454
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Provided are a non-volatile memory system and a programming method thereof. The programming method of the non-volatile memory system includes adjusting a program-verify-voltage of a selected memory cell referring to program data to be written in an interfering cell configured to provide interference for the selected memory cell and programming the selected memory cell depending on the adjusted program-verify-voltage.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.