Pattern forming method
US8450045B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2012 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Jan 18, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pattern forming method includes providing and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate. The under-layer film is irradiated with radiation through a mask to cause an acid to be selectively generated in an exposed area of the under-layer film. An upper-layer film which does not contain a radiation-sensitive acid generator and which contains a composition capable of polymerizing or crosslinking by an action of an acid is provided. A cured film is provided by polymerization or crosslinking selectively in an area of the upper-layer film corresponding to the exposed area of the under-layer film in which the acid has been generated. An area of the upper-layer film corresponding to an area of the under-layer film in which the acid has not been generated is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.