Process for forming an anti-oxidant metal layer on an electronic device
US8450049B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2011 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Nov 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming an anti-oxidant metal layer on an electronic device comprises the steps of providing a substrate; forming a conductive metal layer on the substrate; forming a first photoresist layer on the conductive metal layer; patterning the first photoresist layer to form apertures and first grooves; forming a connecting member having a top surface and a lateral surface in the aperture and the first groove; removing the first photoresist layer to reveal the top surface and the lateral surface; forming a second photoresist layer on the conductive metal layer; patterning the second photoresist layer to form apertures and second grooves; forming an anti-oxidant metal layer in aperture and second groove, the anti-oxidant metal layer covers the top surface and the lateral surface of the connecting member; and removing the second photoresist layer to reveal the anti-oxidant metal layer and the conductive metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.