LDMOS with self aligned vertical LDD backside drain

US8450177B2 · kind B2 · utility

Assignee

• FAIRCHILD SEMICONDUCTOR CORPORATION · US

Inventors

• Bruce D. Marchant · Murray, US
• Daniel M. Kinzer · El Segundo, US

Key dates

• Filing date: Mar 25, 2011
• Grant date: May 28, 2013
• Expiry date: Mar 25, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A field effect transistor includes a semiconductor region of a first conductivity type having an upper surface and a lower surface, the lower surface of the semiconductor region extending over and abutting a substrate. A well regions of a second conductivity type is disposed within the semiconductor region. The field effect transistor also includes source regions of the first conductivity type disposed in the well regions and a gate electrode extending over each well region and overlapping a corresponding one of the source regions. Each gate electrode is insulated from the underlying well region by a gate dielectric. At least one LDD region of the first conductivity type is disposed in the semiconductor region between every two adjacent well regions such that the at least one LDD region is in contact with the two adjacent well regions between which it is disposed. A sinker region is disposed in the semiconductor region directly underneath the at least one LDD region such that the at least one LDD region and the sinker region are positioned along a vertical orientation between the upper and lower surfaces of the semiconductor region.