In-situ passivation methods to improve performance of polysilicon diode
US8450181B2 · kind B2 · utility
19Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2010 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Dec 25, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory cell including a storage element in series with a diode steering element. At least one interface of the diode steering element is passivated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.