Chuanbin Pan
17Patents
12h-index
33Co-inventors
78Inventor score
Filing activity: Jun 26, 1996 → Oct 21, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6154366A | Structures and processes for fabricating moisture resistant chip-on-flex packages | Electricity | 487 | Expired |
| US6309956A | Fabricating low K dielectric interconnect systems by using dummy structures to enhance process | Emerging Cross-Sectional Technologies | 88 | Expired |
| US6143647A | Silicon-rich block copolymers to achieve unbalanced vias | Emerging Cross-Sectional Technologies | 67 | Expired |
| US5886410A | Interconnect structure with hard mask and low dielectric constant materials | Electricity | 66 | Expired |
| US6051869A | Silicon-rich block copolymers to achieve unbalanced vias | Emerging Cross-Sectional Technologies | 46 | Expired |
| US8389971B2 | Memory cells having storage elements that share material layers with steering elements and methods of forming the same | Emerging Cross-Sectional Technologies | 43 | Active |
| US6027995A | Method for fabricating an interconnect structure with hard mask and low dielectric constant materials | Electricity | 39 | Expired |
| US6037249A | Method for forming air gaps for advanced interconnect systems | Electricity | 29 | Expired |
| US8450181B2 | In-situ passivation methods to improve performance of polysilicon diode | Physics | 19 | Active |
| US7906392B2 | Pillar devices and methods of making thereof | Electricity | 18 | Active |
| US9806256B1 | Resistive memory device having sidewall spacer electrode and method of making thereof | Physics | 16 | Active |
| US8987119B2 | Pillar devices and methods of making thereof | Electricity | 13 | Active |
| US7955981B2 | Method of making a two-terminal non-volatile memory pillar device with rounded corner | Electricity | 10 | Active |
| US7723180B2 | Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same | Electricity | 4 | Active |
| US8592793B2 | Electrode diffusions in two-terminal non-volatile memory devices | Electricity | 1 | Active |
| US8981331B2 | Memory cells having storage elements that share material layers with steering elements and methods of forming the same | Emerging Cross-Sectional Technologies | 0 | Active |
| US8969845B2 | Memory cells having storage elements that share material layers with steering elements and methods of forming the same | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.