Method for fabricating semiconductor device
US8450211B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2011 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Dec 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes forming an insulation layer containing an impurity, forming a contact hole by etching the insulation layer, performing a treatment to decrease a concentration of the impurity on a surface of the insulation layer, and rinsing the contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.