Methods of forming silicon oxides and methods of forming interlevel dielectrics
US8450218B2 · kind B2 · utility
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97References
26Claims
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Key dates
| Filing date | Dec 28, 2011 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Dec 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming silicon oxide includes depositing a silicon nitride-comprising material over a substrate. The silicon nitride-comprising material has an elevationally outermost silicon nitride-comprising surface. Such surface is treated with a fluid that is at least 99.5% H2O by volume. A polysilazane-comprising spin-on dielectric material is formed onto the H2O-treated silicon nitride-comprising surface. The polysilazane-comprising spin-on dielectric material is oxidized to form silicon oxide. Other implementations are contemplated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.