Apparatus for thermally treating semiconductor substrates
US8450652B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 15, 2008 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Oct 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus for thermally treating semiconductor substrates has a processing space which is defined by first walls substantially parallel to the semiconductor substrate and a second side wall connected to the first walls; a substrate holding device disposed in the processing space which defines a substrate retaining region for a semiconductor substrate in the processing space; and heating elements which are disposed in the processing space between at least one of the first walls and the substrate retaining region. The thermal gradient between the edge of the semiconductor substrate and the center of the semiconductor substrate can be effectively compensated by providing a shutter between the substrate retaining region and the heating elements which limits the radiation emitted in the processing space by the heating elements in the direction of the substrate retaining region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.