Semiconductor memristor devices
US8450711B2 · kind B2 · utility
12Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2009 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Mar 28, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/74
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Various embodiments of the present invention are directed to electronic devices, which combine reconfigurable diode rectifying states with nonvolatile memristive switching. In one aspect, an electronic device (210,230,240) comprises an active region (212) sandwiched between a first electrode (104) and a second electrode (106). The active region includes two or more semiconductor layers and at least one dopant that is capable of being selectively positioned within the active region to control the flow of charge carriers through the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.