Magnetoresistive random access memory and method of making the same
US8450722B2 · kind B2 · utility
2Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Jul 15, 2011 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Nov 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive random access memory (MRAM) cell includes a magnetic tunnel junction (MTJ), a top electrode disposed over the MTJ, a bottom electrode disposed below the MTJ, and an induction line disposed to one side of the MTJ. The induction line is configured to induce a perpendicular magnetic field at the MTJ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.