Graphene based three-dimensional integrated circuit device

US8450779B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Dechao Guo · Niskayuna, US
• Shu-Jen Hen · Wappingers Falls, US
• Chung-Hsun Lin · White Plains, US
• Ning Su · Hopewell Junction, US

Key dates

• Filing date: Mar 8, 2010
• Grant date: May 28, 2013
• Expiry date: Apr 4, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/755

Abstract

A three-dimensional (3D) integrated circuit (IC) structure includes a first layer of graphene formed over a substrate; a first level of one or more active devices formed using the first layer of graphene; an insulating layer formed over the first level of one or more active devices; a second layer of graphene formed over the insulating layer; and a second level of one or more active devices formed using the second layer of graphene, the second level of one or more active devices electrically interconnected with the first level of one or more active devices.