Structure and fabrication method of tunnel field effect transistor with increased drive current and reduced gate induced drain leakage (GIDL)

US8450792B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Mohit Bajaj · Savanuru, IN
• Kota V. R. M. Murali · Bengaluru, IN
• Edward J. Nowak · South Burlington, US
• Rajan K. Pandey · Bengaluru, IN

Key dates

• Filing date: Apr 8, 2011
• Grant date: May 28, 2013
• Expiry date: Jul 14, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/405

Abstract

Gate induced drain leakage in a tunnel field effect transistor is reduced while drive current is increased by orienting adjacent semiconductor bodies, based on their respective crystal orientations or axes, to optimize band-to-band tunneling at junctions. Maximizing band-to-band tunneling at a source-channel junction increases drive current, while minimizing band-to-band tunneling at a channel-drain junction decreases GIDL. GIDL can be reduced by an order of magnitude in an embodiment. Power consumption for a given frequency can also be reduced by an order of magnitude.