Fin transistor structure and method of fabricating the same

US8450813B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Zhijiong Luo · Poughkeepsie, US
• Haizhou Yin · Poughkeepsie, US
• Huilong Zhu · Poughkeepsie, US

Key dates

• Filing date: Jun 25, 2010
• Grant date: May 28, 2013
• Expiry date: Jun 20, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/024

Abstract

There is provided a fin transistor structure and a method of fabricating the same. The fin transistor structure comprises a fin formed on a semiconductor substrate, wherein a bulk semiconductor material is formed between a portion of the fin serving as the channel region of the transistor structure and the substrate, and an insulation material is formed between remaining portions of the fin and the substrate. Thereby, it is possible to reduce the current leakage while maintaining the advantages of body-tied structures.