Methods of forming spin torque devices and structures formed thereby
US8450818B2 · kind B2 · utility
16Cited by
9References
13Claims
0Family size
Inventors
Key dates
| Filing date | Jun 18, 2009 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Dec 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods of forming spin torque microelectronic devices are described. Those methods may include forming a free FM layer on a substrate, forming a non-magnetic layer on the free FM layer, forming at least three input pillars on the non-magnetic layer, and forming an output pillar on the non-magnetic layer to form a majority gate device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.