Nitride based semiconductor device
US8450826B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Mar 16, 2011 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Jul 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
Disclosed herein is a nitride based semiconductor device. There is provided a nitride based semiconductor device including a base substrate; a semiconductor layer disposed on the base substrate; and an electrode structure disposed on the semiconductor layer, wherein the electrode structure includes: a first electrode ohmic-contacting the semiconductor layer; a ohmic contact unit ohmic-contacting the semiconductor layer and spaced apart from the first electrode; and a schottky contact unit schottky-contacting the semiconductor layer and covering the ohmic contact unit.
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