MRAM cells and circuit for programming the same
US8451655B2 · kind B2 · utility
5Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2012 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Feb 2, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A circuit includes magneto-resistive random access memory (MRAM) cell and a control circuit. The control circuit is electrically coupled to the MRAM cell, and includes a current source configured to provide a first writing pulse to write a value into the MRAM cell, and a read circuit configured to measure a status of the MRAM cell. The control circuit is further configured to verify whether a successful writing is achieved through the first writing pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.