Method of depositing amorphus aluminium oxynitride layer by reactive sputtering of an aluminium target in a nitrogen/oxygen atmosphere
US8454805B2 · kind B2 · utility
2Cited by
1References
20Claims
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Key dates
| Filing date | Mar 20, 2009 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | Oct 14, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/0676
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing an amorphous layer of AlON includes providing an aluminum sputter target in a chamber, exposing the target and chamber to O2 to saturate the exposed surfaces with oxygen, introducing a substrate into the chamber in an atmosphere containing at least nitrogen and oxygen, and sputtering the target in the nitrogen and oxygen atmosphere to deposit an amorphous AlON film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.