Method of making a micro-electro-mechanical-systems (MEMS) device

US8455286B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Lisa H. Karlin · Chandler, US
• David W. Kierst · Austin, US
• Lianjun Liu · Gilbert, US
• Wei Liu · Tangxia, CN
• Ruben B. Montez · Cedar Park, US
• Robert F. Steimle · Austin, US

Key dates

• Filing date: Oct 29, 2010
• Grant date: Jun 4, 2013
• Expiry date: Jan 21, 2031

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C2201/053
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method of forming a MEMS device includes forming a sacrificial layer over a substrate. The method further includes forming a metal layer over the sacrificial layer and forming a protection layer overlying the metal layer. The method further includes etching the protection layer and the metal layer to form a structure having a remaining portion of the protection layer formed over a remaining portion of the metal layer. The method further includes etching the sacrificial layer to form a movable portion of the MEMS device, wherein the remaining portion of the protection layer protects the remaining portion of the metal layer during the etching of the sacrificial layer to form the movable portion of the MEMS device.