Method for forming self-aligned phase-change semiconductor diode memory

US8455298B2 · kind B2 · utility

Assignee

• CONTOUR SEMICONDUCTOR, INC. · US

Inventors

• Mac D. Apodaca · San Jose, US
• Ailian Zhao · Austin, US
• Jenn C. Chow · Campbell, US
• Thomas Brown · Berkeley, US
• Lisa Ceder · Hollister, US

Key dates

• Filing date: Aug 18, 2009
• Grant date: Jun 4, 2013
• Expiry date: Aug 18, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/882

Abstract

A method for fabricating a memory device includes depositing a phase-change and/or a resistive change material. The memory device is formed photolithographically using sixteen or fewer masks.