Method of manufacturing a semiconductor device

US8455325B2 · kind B2 · utility

Assignee

• FUJITSU SEMICONDUCTOR LIMITED · JP

Inventors

• Masahiro Fukuda · Tokyo, JP
• Yosuke Shimamune · Kawasaki, JP

Key dates

• Filing date: Jan 10, 2012
• Grant date: Jun 4, 2013
• Expiry date: Jan 10, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/601

Abstract

A method of manufacturing a semiconductor device which includes forming a gate insulating film and a gate electrode over a semiconductor substrate, forming a first recess in the first semiconductor substrate on both sides of the gate electrode by dry etching, forming a second recess by removing a bottom and sidewalls of the first recess by wet etching, and forming a semiconductor layer in the second recess.