Patent · US Active

Trench capacitor with spacer-less fabrication process

US8455327B2 · kind B2 · utility

1Cited by

4References

7Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Chengwen Pei · Danbury, US
Xi Li · Somers, US
Geng Wang · Stormville, US

Key dates

Filing date	Aug 4, 2011
Grant date	Jun 4, 2013
Priority date	—
Expiry date	Aug 4, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/201
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A trench capacitor and method of fabrication are disclosed. The SOI region is doped such that a selective isotropic etch used for trench widening does not cause appreciable pullback of the SOI region, and no spacers are needed in the upper portion of the trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.