Xi Li
35Patents
9h-index
48Co-inventors
71Inventor score
Filing activity: Jan 25, 2006 → Apr 15, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7476578B1 | Process for finFET spacer formation | Electricity | 42 | Active |
| US7560360B2 | Methods for enhancing trench capacitance and trench capacitor | Electricity | 32 | Active |
| US9495651B2 | Cohort manipulation and optimization | Physics | 26 | Active |
| US8278164B2 | Semiconductor structures and methods of manufacturing the same | Electricity | 17 | Active |
| US7709320B2 | Method of fabricating trench capacitors and memory cells using trench capacitors | Electricity | 16 | Active |
| USD931104S1 | Decanter | General | 10 | Active |
| US8008160B2 | Method and structure for forming trench DRAM with asymmetric strap | Electricity | 10 | Active |
| USD1039099S1 | Float | General | 9 | Active |
| US10633851B2 | Assembled self-recovery circular concrete-filled steel-tube composite joint | Fixed Constructions | 9 | Active |
| US7892928B2 | Method of forming asymmetric spacers and methods of fabricating semiconductor device using asymmetric spacers | Electricity | 7 | Active |
| US7498271B1 | Nitrogen based plasma process for metal gate MOS device | Electricity | 7 | Active |
| US8765491B2 | Shallow trench isolation recess repair using spacer formation process | Electricity | 6 | Active |
| US7919379B2 | Dielectric spacer removal | Electricity | 5 | Active |
| US9659267B2 | Cohort cost analysis and workload migration | Physics | 5 | Active |
| US7749835B2 | Trench memory with self-aligned strap formed by self-limiting process | Electricity | 4 | Active |
| US7888722B2 | Trench capacitors and memory cells using trench capacitors | Electricity | 4 | Active |
| US7494891B2 | Trench capacitor with void-free conductor fill | Electricity | 2 | Active |
| US8604564B2 | Semiconductor structures and methods of manufacturing the same | Electricity | 2 | Active |
| US8829612B2 | Method of forming asymmetric spacers and methods of fabricating semiconductor device using asymmetric spacers | Electricity | 1 | Active |
| US8455327B2 | Trench capacitor with spacer-less fabrication process | Electricity | 1 | Active |
| US8492280B1 | Method for simultaneously forming features of different depths in a semiconductor substrate | Electricity | 1 | Active |
| US7682922B2 | Post STI trench capacitor | Electricity | 1 | Active |
| US9013008B2 | Semiconductor structures and methods of manufacturing the same | Electricity | 1 | Active |
| US7858485B2 | Structure and method for manufacturing trench capacitance | Electricity | 1 | Active |
| US8021945B2 | Bottle-shaped trench capacitor with enhanced capacitance | Emerging Cross-Sectional Technologies | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.