Sidewall image transfer using the lithographic stack as the mandrel
US8455364B2 · kind B2 · utility
22Cited by
12References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 6, 2009 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | Nov 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one non-limiting exemplary embodiment, a method includes: providing a structure having at least one lithographic layer on a substrate, where the at least one lithographic layer includes a planarization layer (PL); forming a sacrificial mandrel by patterning at least a portion of the at least one lithographic layer using a photolithographic process, where the sacrificial mandrel includes at least a portion of the PL; and producing at least one microstructure by using the sacrificial mandrel in a sidewall image transfer process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.