Trench embedding method
US8455369B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2011 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | Dec 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench embedding method includes forming an oxidization barrier film on a trench; forming an expandable film on the oxidization barrier film; embedding an embedding material that contracts by being fired on the trench; and firing the embedding material, wherein the forming of the oxidization barrier film includes: forming a first seed layer on the trench by supplying an aminosilane-based gas; and forming a silicon nitride film on the first seed layer, wherein the forming of the expandable film includes: forming a second seed layer on the silicon nitride film by supplying an aminosilane-based gas; and forming a silicon film on the second seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.