Controlled placement of dopants in memristor active regions
US8455852B2 · kind B2 · utility
4Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2009 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | Mar 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26506
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Various embodiments of the present invention are direct to nanoscale, reconfigurable memristor devices. In one aspect, a memristor device (500,600) comprises an active region (508,610) sandwiched between a first electrode (301) and a second electrode (302). The active region including a non-volatile dopant region (506,608) selectively formed and positioned within the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.