Semiconductor structure for reducing band-to-band tunneling (BTBT) leakage

US8455858B2 · kind B2 · utility

Assignee

• TSINGHUA UNIVERSITY · CN

Inventors

• Jing Wang · Longbeilingcun, CN
• Jun Xu · Nanjing, CN
• Lei Guo · Williamsburg, US

Key dates

• Filing date: Nov 8, 2010
• Grant date: Jun 4, 2013
• Expiry date: Nov 28, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

A semiconductor structure is provided. The semiconductor structure may include a substrate (100); a buffer layer or an insulation layer (200) formed on the substrate; a first strained wide bandgap semiconductor material layer (400) formed on the buffer layer or the insulation layer; a strained narrow bandgap semiconductor material layer (500) formed on the first strained wide bandgap semiconductor material layer; a second strained wide bandgap semiconductor material layer (700) formed on the strained narrow bandgap semiconductor material layer; a gate stack (300) formed on the second strained wide bandgap semiconductor material layer; and a source and a drain (600) formed in the first strained wide bandgap semiconductor material layer, the strained narrow bandgap semiconductor material layer and the second strained wide bandgap semiconductor material layer respectively.