Jing Wang
52Patents
5h-index
35Co-inventors
68Inventor score
Filing activity: Nov 8, 2010 → Nov 30, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8455858B2 | Semiconductor structure for reducing band-to-band tunneling (BTBT) leakage | Electricity | 9 | Active |
| US8927966B2 | Dynamic random access memory unit and method for fabricating the same | Electricity | 8 | Active |
| US11155714B2 | Substituted polyfluorene compounds | Physics | 7 | Active |
| US8815690B2 | Tunneling device and method for forming the same | Electricity | 5 | Active |
| US8440550B2 | Method for forming strained layer with high Ge content on substrate and semiconductor structure | Electricity | 5 | Active |
| US10621494B2 | System and method for circuit simulation based on recurrent neural networks | Physics | 4 | Active |
| US9105475B1 | Method for forming fin field effect transistor | Electricity | 4 | Active |
| US10204188B2 | Systems, methods and computer program products for analyzing performance of semiconductor devices | Physics | 3 | Active |
| US11584883B2 | Conjugated polymers and methods of use | Chemistry; Metallurgy | 3 | Active |
| US9728639B2 | Tunnel field effect transistors having low turn-on voltage | Electricity | 3 | Active |
| US8546857B1 | Semiconductor structure and method for forming the same | Electricity | 2 | Active |
| US11282695B2 | Systems and methods for wafer map analysis | Physics | 2 | Active |
| US8653504B2 | Complementary tunneling field effect transistor and method for forming the same | Electricity | 2 | Active |
| US8592864B2 | Semiconductor device and method for forming the same | Electricity | 2 | Active |
| US9526436B2 | Amplifiers including tunable tunnel field effect transistor pseudo resistors and related devices | Electricity | 1 | Active |
| US12091554B2 | Substituted polyfluorene compounds | Physics | 1 | Active |
| US8796081B2 | Semiconductor structure and method for forming the same | Electricity | 1 | Active |
| US8860143B2 | High-K gate dielectric with work function adjustment metal layer | Electricity | 1 | Active |
| US8803225B2 | Tunneling field effect transistor having a lightly doped buried layer | Electricity | 1 | Active |
| US11537841B2 | System and method for compact neural network modeling of transistors | Physics | 1 | Active |
| US9059268B2 | Tunneling field effect transistor and method for fabricating the same | Electricity | 0 | Active |
| US8704306B2 | Strained Ge-on-insulator structure and method for forming the same | Electricity | 0 | Active |
| US12327955B2 | Parameter configuration device | Mechanical Engineering; Lighting; Heating | 0 | Active |
| US11003737B2 | Generic high-dimensional importance sampling methodology | Physics | 0 | Active |
| US9105464B2 | Semiconductor structure with rare earth oxide | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.