Semiconductor light-emitting device with improved light extraction efficiency
US8455906B2 · kind B2 · utility
2Cited by
15References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2011 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | Nov 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
Abstract
The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.