TSVs with different sizes in interposers for bonding dies
US8455995B2 · kind B2 · utility
15Cited by
87References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2010 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | Apr 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device includes an interposer including a substrate having a top surface and a bottom surface. A plurality of through-substrate vias (TSVs) penetrates through the substrate. The plurality of TSVs includes a first TSV having a first length and a first horizontal dimension, and a second TSV having a second length different from the first length, and a second horizontal dimension different from the first horizontal dimension. An interconnect structure is formed overlying the top surface of the substrate and electrically coupled to the plurality of TSVs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.