Filled through-silicon via with conductive composite material
US8456017B2 · kind B2 · utility
9Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2011 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | Jul 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
By adding particles of high thermal conductivity and low thermal expansion coefficient into the copper as a composite material and filling with the composite material into the through-via hole, the mismatch of the coefficient of thermal expansion and the stress of the through-silicon via are lowered and the thermal conductivity of the through-silicon via is increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.