Magnonic magnetic random access memory device
US8456895B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 2011 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | Oct 13, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A mechanism is provided for bidirectional writing. A structure includes a reference layer on top of a tunnel barrier, a free layer underneath the tunnel barrier, a metal spacer underneath the free layer, an insulating magnet underneath the metal spacer, and a high resistance layer underneath the insulating layer. The high resistance layer acts as a heater in which the heater heats the insulating magnet to generate spin polarized electrons. A magnetization of the free layer is destabilized by the spin polarized electrons generated from the insulating magnet. A voltage is applied to change the magnetization of the free layer when the magnetization is destabilized. A polarity of the voltage determines when the magnetization of the free layer is parallel and antiparallel to a magnetization of the reference layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.