Magnetic memory with porous non-conductive current confinement layer
US8456903B2 · kind B2 · utility
9Cited by
124References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2010 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | Aug 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3286
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.